AON7296

$0.86

Description：MOSFET N-CH 100V 5A/12.5A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e3c599878439 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AON7296 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 5A/12.5A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7296

Description：MOSFET N-CH 100V 5A/12.5A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：66mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：415 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 20.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7296

AON7296

Single FETs, MOSFETs Overview

The AON7296 is a 100V N-Channel MOSFET utilizing trench technology for high-frequency switching. It features a maximum drain-source voltage of 100V and a continuous drain current of 12.5A at TC=25°C. The on-resistance is less than 66mΩ at VGS=10V and 90mΩ at VGS=4.5V. Gate charge is 12nC at 10V. Input capacitance is 415pF. Power dissipation reaches 20.8W at TC=25°C. Operating temperature spans -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Optimized trench MOSFET technology for efficient high-frequency switching performance
Minimized conduction and switching power losses through low RDS(ON) and capacitance combination
Validated with 100% Unclamped Inductive Switching (UIS) testing
Verified with 100% gate resistance (Rg) testing

Single FETs, MOSFETs Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking and revision status against the manufacturer's latest documentation before finalizing designs. Confirm thermal management requirements align with the junction-to-case resistance specifications provided in the datasheet. Ensure compliance with export control regulations applicable to the destination region.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-frequency switching capabilities within a compact footprint. Evaluate the thermal characteristics carefully, as power dissipation limits are heavily dependent on case temperature and PCB copper area. Consider the low gate charge for driving efficiency in high-speed circuits.

Single FETs, MOSFETs Part Context

This device belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs designed for general-purpose power management. It utilizes advanced trench technology to deliver superior performance metrics compared to standard planar devices. The product line targets cost-sensitive yet performance-critical markets including consumer electronics and industrial systems.