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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 4.5A 8DFN
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 7A (Tc)
- Rds On (Max) @ Id, Vgs：68mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：415pF @ 50V
- Power - Max：3.5W (Ta), 7.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerSMD, Flat Leads
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AOND62930 is a dual N-channel MOSFET utilizing AlphaSGT technology, housed in a DFN5x6 EP2 package. It features a drain-source voltage of 100V and a continuous drain current of 7A at 25°C case temperature. The on-resistance is less than 68mΩ at VGS=10V and less than 94mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage ranging from 1.7V to 2.8V, total gate charge of 6.5nC to 12nC at 10V, and input capacitance of 415pF. Thermal characteristics specify a junction-to-case resistance of 17°C/W and a junction-to-ambient resistance of 66°C/W.
Feature Summary
- Dual N-channel configuration with optimized layout for improved performance
- Manufactured using Trench Power AlphaSGT technology
- Subjected to 100% Unclamped Inductive Switching (UIS) testing
- RoHS and Halogen-Free compliant construction
Applications
- Dimming circuits requiring MOSFET switching capabilities
Procurement Notes
Verify the specific ordering suffix and package form against official Alpha & Semiconductor documentation before procurement. Confirm that the component meets all required environmental standards and thermal management specifications for the intended application environment. Ensure compatibility with existing board designs regarding the DFN5x6 EP2 footprint.
Selection Notes
Select this component based on its 100V rating and 7A continuous current capability within the DFN5x6 EP2 package. Consider the low on-resistance values at both 10V and 4.5V gate drive voltages for efficiency requirements. Evaluate the thermal resistance parameters to ensure adequate heat dissipation for the target power dissipation levels.
Part Context
The AOND62930 belongs to the AlphaSGT series of power MOSFETs from Alpha & Omega Semiconductor. It is designed as a dual N-channel device suitable for applications requiring compact packaging and efficient switching. The part utilizes trench technology to achieve low on-resistance and fast switching speeds.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage is ±20V.
Is the device tested for avalanche energy?
Yes, the datasheet confirms that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.
What is the body-diode reverse recovery time?
The body-diode reverse recovery time (trr) is 16ns under specified test conditions.
