AONE36132

$0.54

Description：MOSFET 2N-CH 25V 17A 8DFN
Series：-

SKU:d05dc3ce4ede Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 25V 17A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs：4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V, 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：880pF @ 12.5V, 3215pF @ 12.5V
Power - Max：2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-DFN-EP (3.3x3.3)
Grade：-
Qualification：-

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AONE36132

Overview

The AONE36132 is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features Bottom Source Technology and is housed in an 8-DFN (3.3x3.3mm) package with Tape & Reel form factor. The device integrates two distinct channels: Q1 rated for 17A continuous drain current at VGS=10V with RDS(ON) < 4.6mΩ, and Q2 rated for 34A with RDS(ON) < 1.4mΩ. Both channels support a Drain-Source Voltage of 25V. The component is RoHS compliant, halogen-free, and undergoes 100% UIS and Rg testing.

Feature Summary

Dual asymmetric configuration providing optimized performance for different load requirements within a single package
Bottom Source Technology design to enhance thermal efficiency and current handling capabilities
Comprehensive reliability validation including 100% Unclamped Inductive Switching and Gate Resistance testing

Applications

DC/DC Converters in PC and Server systems
Point of Load Converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and quantity specifications. Confirm that the component meets all required environmental standards, such as RoHS compliance and halogen-free status, prior to integration into the final assembly process.

Selection Notes

Select this component based on the requirement for a compact dual-channel solution with asymmetric current ratings. Ensure the application voltage does not exceed the 25V BVDSS limit. Consider the thermal resistance characteristics when designing the PCB copper area, as the junction-to-ambient impedance is highly dependent on board layout and copper weight.

Part Context

This part belongs to the AONE series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It utilizes a DFN3.3x3.3A package designed for surface-mount applications requiring low profile and efficient heat dissipation. The asymmetric nature allows designers to utilize one channel for high-current switching and the other for lower-current control or parallel operation.