AONG36322

Overview

The AONG36322 is a dual asymmetric N-channel MOSFET array from Alpha & Omega Semiconductor, housed in an 8-DFN surface-mount package. It integrates two 30V MOSFETs configured for half-bridge applications. The device supports continuous drain currents of 20A at ambient temperature and 83A at case temperature. Power dissipation ratings are specified as 3.1W (Ta) and 52W (Tc). The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Integrates high-side and low-side MOSFETs in an asymmetric half-bridge configuration within a compact DFN3.5x5 XSPairFET package.

Applications

• DC-DC converters
• Server power supplies
• Point-of-load (POL) regulation

Procurement Notes

Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation prior to integration. Confirm that the thermal management design accounts for the specified Ta and Tc power dissipation limits to ensure reliable operation under maximum load conditions.

Selection Notes

Select this component for designs requiring integrated half-bridge switching with low voltage ratings. The asymmetric configuration optimizes performance for specific duty cycles. Ensure PCB layout supports the thermal pad requirements defined in the package dimensions to achieve the stated case temperature performance metrics.

Part Context

This part belongs to the XSPairFET family, designed for high-density power conversion. It replaces discrete MOSFET solutions by combining two devices into a single footprint, reducing board space and parasitic inductance compared to separate components.

Replacement Considerations

Consult official substitution lists for compatible dual N-channel MOSFET arrays with matching 30V ratings and 8-DFN footprints. Verify pinout compatibility and thermal characteristics before replacing.