AONH36328

$0.20

Description：MOSFET 2N-CH 30V 13.8A 8DFN
Series：-

SKU:dbf646c2fe3d Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 13.8A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：13.8A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：700pF @ 15V
Power - Max：2.5W (Ta), 23W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-WDFN Exposed Pad
Supplier Device Package：8-DFN-EP (3x3)
Grade：-
Qualification：-

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AONH36328

Overview

The AONH36328 is a dual asymmetric N-channel MOSFET featuring latest trench power technology. It integrates two independent channels within a single Power DFN3x3A package. Q1 and Q2 share identical Drain-Source Voltage (VDS) ratings of 30V. Continuous Drain Current (ID) reaches 18A at TC=25°C, with pulsed current capability up to 40A. On-resistance (RDS(on)) is less than 8.5mΩ at VGS=10V and 11.5mΩ at VGS=4.5V. Total gate charge (Qg) is 20nC at 10V. The device supports a junction temperature range of -55°C to 150°C and includes typical HBM Class 2 ESD protection.

Feature Summary

Dual asymmetric configuration integrating two N-channel MOSFETs in a compact footprint
Low on-resistance optimized for efficient operation at both 10V and 4.5V gate drive levels
High current handling capability with robust avalanche energy ratings
Integrated electrostatic discharge protection compliant with HBM Class 2 standards

Applications

DC/DC converters in computing and server systems
Point-of-load (POL) regulation circuits
Isolated DC/DC converters in telecommunications infrastructure
Industrial power supply modules

Procurement Notes

Verify the specific ordering suffix against Alpha & Omega Semiconductor official documentation to confirm exact packaging type and reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status matches project requirements before finalizing procurement orders.

Selection Notes

Select this component for applications requiring dual isolated or semi-isolated low-voltage switching within tight spatial constraints. Evaluate thermal performance based on specific PCB copper area and airflow conditions, as junction-to-ambient resistance varies significantly with board design. Verify gate drive voltage compatibility with the specified RDS(on) thresholds.

Part Context

This part belongs to Alpha & Omega Semiconductor's trench MOSFET portfolio designed for high-density power management. It utilizes advanced process technology to minimize conduction losses while maintaining fast switching speeds. The dual configuration allows for cost-effective implementation of half-bridge or synchronous rectifier topologies in space-constrained designs.