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AONH36334 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
The AONH36334 is a dual asymmetric N-channel MOSFET featuring latest Trench Power MOSFET technology. It integrates two channels in a single Power DFN3x3A package. Q1 provides a drain-source voltage of 30V with a continuous current of 16A and on-resistance under 10.2mΩ at VGS=10V. Q2 offers 30V breakdown with 18A continuous current and on-resistance below 7.7mΩ at VGS=10V. The device supports low gate charge and high current capability, operating within a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and ordering suffixes directly with Alpha & Omega Semiconductor or authorized distributors before finalizing procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements for your manufacturing process. Ensure all electrical parameters align with your system's thermal and voltage constraints prior to purchase.
Select this component when space-constrained designs require two independent N-channel switches with differing current ratings. The asymmetric nature allows optimizing each channel for specific load requirements within a single package. Consider the low RDS(on) at 4.5V if driving from lower voltage logic levels. Evaluate the thermal resistance values against your PCB copper area and airflow conditions.
Alpha & Omega Semiconductor manufactures the AONH36334 as part of its discrete power device portfolio. The company specializes in integrating semiconductor process technology with advanced packaging to deliver high-performance solutions. This product targets high-volume applications requiring efficient power management in consumer, industrial, and computing sectors.
No public confirmed substitute part numbers are documented for the AONH36334.
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