AONP36320

$0.35

Description：MOSFET 2N-CH 30V 26A 8DFN
Series：-

SKU:5066c9afda0e Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 26A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 15V, 1650pF @ 15V
Power - Max：3.3W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN-EP (3.3x3.3)
Grade：-
Qualification：-

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AONP36320

Overview

The AONP36320 is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing Trench Power MOSFET technology. It features a Drain-Source Voltage (BVDSS) of 30V and operates within a junction temperature range of -55°C to 150°C. The device provides high current capability with continuous drain currents reaching up to 100A for Q1 and 103A for Q2 at VGS=10V. Static Drain-Source On-Resistance (RDS(ON)) is specified as less than 3.2mΩ for Q1 and less than 3mΩ for Q2 at VGS=10V, and less than 5.2mΩ for Q1 and less than 5mΩ for Q2 at VGS=4.5V. Total Gate Charge (Qg) at 10V is typically 22nC for Q1 and 20nC for Q2.

Feature Summary

Incorporates Trench Power MOSFET technology for low on-resistance and gate charge.
Features high current capability suitable for demanding power applications.
Includes 100% Unclamped Inductive Switching (UIS) testing for reliability.

Applications

Motor Drive
Buck-Boost Converters

Procurement Notes

Verify the specific ordering suffix and package type against official manufacturer documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements relevant to your manufacturing standards. Ensure the supplier source aligns with authorized distribution channels to guarantee product authenticity and traceability.

Selection Notes

Select this component based on its 30V rating and low RDS(ON) characteristics for efficient power switching. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate charge parameters to ensure compatibility with the intended driver circuitry for optimal switching performance.

Part Context

This part belongs to the AONP series of dual asymmetric N-channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for compact surface-mount applications, specifically utilizing the DFN3.3x3.3C package format. The series emphasizes high efficiency and robustness in power management solutions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative manufacturers.