AONP36336

Overview

The AONP36336 is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a DFN3.3x3.3B package with bottom source technology for low on-resistance. Q1 supports a drain-source voltage of 30V, continuous current of 50A at TC=25°C, and RDS(ON) below 4.7mΩ at VGS=10V. Q2 provides 30V, 50A at TC=25°C, and RDS(ON) below 5.8mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Bottom source technology architecture
• Very low RDS(ON) at Vgs 4.5V
• Low Gate Charge
• High Current Capability

Applications

• Buck-boost Converters in Computing
• Point of Load Converter

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the requested package type matches the DFN3.3x3.3B specification. Ensure compliance with RoHS 2.0 and Halogen-Free requirements as stated in the datasheet. Validate thermal performance parameters against the intended application environment.

Selection Notes

Select this component based on the required 30V rating and asymmetric current handling capabilities. Evaluate thermal resistance values (RqJC and RqJA) relative to the PCB copper area and ambient conditions. Consider the gate charge specifications for switching frequency optimization. Verify that the package dimensions fit the target footprint.

Part Context

This part belongs to the AONP series of dual asymmetric N-channel MOSFETs from Alpha & Omega Semiconductor. It utilizes a DFN3.3x3.3B surface-mount package designed for high-density circuit designs. The product line emphasizes low on-resistance and high current capability for power management applications.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout and electrical parameters.