AONR21321

$0.60

Description：MOSFET P-CH 30V 24A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f26387dab5c5 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONR21321 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 24A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR21321

Description：MOSFET P-CH 30V 24A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1180 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 24W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONR21321

AONR21321

Single FETs, MOSFETs Overview

The AONR21321 is a P-Channel MOSFET featuring a -30V drain-source voltage and a continuous drain current of -24A at VGS=-10V. It utilizes advanced trench technology to achieve a low on-resistance of less than 16.5mΩ at VGS=-10V and less than 29.5mΩ at VGS=-4.5V. The device is housed in a DFN 3x3_EP package with an exposed pad, offering high current capability and 100% UIS testing for robustness.

Single FETs, MOSFETs Feature Summary

Advanced Trench Technology for optimized performance
Low On-Resistance across standard gate drive voltages
High Current Capability suitable for demanding loads
100% Unclamped Inductive Switching (UIS) Tested

Single FETs, MOSFETs Applications

Notebook AC-in Load Switch
Battery Protection Charge/Discharge Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity of 5000 units. Confirm RoHS and Halogen-Free compliance status if environmental regulations apply to your manufacturing process. Ensure the DFN 3x3_EP package footprint aligns with your PCB design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-Channel solution is required for -30V applications. The low RDS(ON) values support efficient power handling in notebook and battery protection systems. Verify that the gate drive voltage meets the -4.5V or -10V thresholds to utilize the specified on-resistance performance levels effectively.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of power management components designed for portable electronics. The DFN 3x3_EP package provides a small form factor ideal for space-constrained designs like notebooks. The product emphasizes reliability through comprehensive electrical and thermal testing protocols defined in the datasheet.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the source material. Consult official distributor databases for cross-reference data if alternative sourcing is necessary.