AONR21357

$0.92

Description：MOSFET P-CH 30V 21A/34A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f172a02e26ba Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONR21357 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 21A/34A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR21357

Description：MOSFET P-CH 30V 21A/34A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2830 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONR21357

AONR21357

Single FETs, MOSFETs Overview

The AONR21357 is a surface-mount P-channel MOSFET from Alpha & Omega Semiconductor, housed in an 8-DFN-EP(3x3) package. It features a drain-source voltage of -30V and continuous drain currents of 21A at ambient temperature and 34A at case temperature. The device utilizes advanced trench technology to achieve low on-resistance values of less than 7.8mΩ at VGS=-10V and less than 12.3mΩ at VGS=-4.5V. Power dissipation capabilities are rated at 5W at Ta=25°C and 30W at Tc=25°C, with a maximum junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized performance
Low static drain-source on-resistance across gate voltages
High current capability suitable for power switching applications
100% tested for unclamped inductive switching (UIS) and gate resistance

Single FETs, MOSFETs Applications

Notebook AC-in load switch
Battery protection charge/discharge circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and reel specifications. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure suitability for intended operating temperatures and validate thermal management designs against the provided junction-to-case and junction-to-ambient resistance parameters before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on its 30V rating and high current capacity relative to its compact DFN 3x3 footprint. Evaluate the low RDS(ON) characteristics at both -4.5V and -10V gate drive levels to determine efficiency in the target circuit. Consider the thermal resistance values when designing heat dissipation strategies, particularly for applications requiring operation near the maximum junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of discrete semiconductors, specifically within their P-channel MOSFET category. It is designed for surface-mount assembly, offering a balance of electrical performance and physical size. The manufacturer provides detailed electrical and thermal characterization data to support integration into various power management and switching systems.