AONR26309A

$0.16

Description：MOSFET N/P-CH 30V 6.5A 8DFN
Series：-

SKU:35b61acdc92b Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 6.5A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel, Common Drain (Complementary)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V, 1100pF @ 15V
Power - Max：1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN-EP (3x3)
Grade：-
Qualification：-

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AONR26309A

Overview

The AONR26309A is a complementary MOSFET pair utilizing advanced trench technology, housed in a DFN 3x3 EP package. The N-channel device offers a drain-source voltage of 30V and continuous current of 14A at 25°C, with on-resistance below 20mΩ at VGS=10V. The P-channel counterpart provides -30V breakdown and -21A continuous current, featuring on-resistance under 32mΩ at VGS=-10V. Both transistors are rated for junction temperatures up to 150°C and include ESD protection.

Feature Summary

Complementary N-channel and P-channel configuration suitable for inverter applications
Advanced trench technology providing low gate charge and excellent on-resistance
Integrated electrostatic discharge (ESD) protection
Validated through 100% testing for unclamped inductive switching (UIS) capability

Applications

Inverter circuits
Load switch applications requiring bidirectional control
Low voltage power management systems

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance standards required for the target assembly process before finalizing procurement orders.

Selection Notes

Select this complementary pair for designs requiring matched switching characteristics in low-voltage environments. Ensure the PCB layout accommodates the exposed pad thermal dissipation requirements. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance across the operating temperature range.

Part Context

This component belongs to the Alpha & Omega Semiconductor lineup of trench MOSFETs designed for high-efficiency switching. It serves as a compact solution for dual-transistor topologies where space constraints necessitate the DFN 3x3 EP footprint while maintaining robust current handling capabilities.