AONS520A70

Single FETs, MOSFETs Overview

The AONS520A70 is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 11 A. The device utilizes Trench Power AlphaMOS technology to achieve low on-resistance and gate charge. Input capacitance (Ciss) is specified at 1115 pF @ 100 V. Maximum power dissipation is rated at 4.2 W in free air (Ta) and 166 W on a case (Tc). The operating junction temperature range extends from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 700 V drain-source breakdown
• Low on-resistance achieved via Trench Power AlphaMOS technology
• Optimized for low gate charge to enhance switching efficiency
• Integrated ESD protection mechanisms

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Industrial motor control systems
• Power supply switch-mode applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and pinout configuration against the official datasheet before integration, as surface-mount variants may differ. Confirm RoHS compliance status and moisture sensitivity level (MSL) requirements for your assembly process. Ensure thermal management design accounts for the specified power dissipation limits under your expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required alongside moderate current handling capabilities. The 700 V rating suits primary-side or high-voltage secondary applications. Evaluate thermal performance carefully due to the significant difference between Ta and Tc power ratings. Compare gate charge specifications against driver capabilities to ensure efficient switching transitions within the target frequency range.

Single FETs, MOSFETs Part Context

Alpha & Omega Semiconductor Inc. specializes in power semiconductors, including MOSFETs and IGBTs. The AONS520A70 belongs to their high-voltage discrete transistor lineup, leveraging proprietary trench technology for improved efficiency compared to planar devices. This series targets robust industrial and consumer power electronics requiring reliable high-voltage switching.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 700 V N-channel MOSFETs offering similar 11 A current ratings and compatible packages. Verify that substitute parts meet or exceed the original Rds(on) and Qg specifications to maintain circuit efficiency and thermal performance without redesigning the PCB footprint.

Single FETs, MOSFETs FAQ

What technology is used in the AONS520A70?

It utilizes Alpha & Omega's Trench Power AlphaMOS (αMOS LV) technology.

Does the AONS520A70 include ESD protection?

Yes, the datasheet specifies integrated ESD protection features.