AONS660A70F

$1.73

Description：MOSFET N-CH 700V 1.7A/9.6A 8DFN
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:db05014b0d00 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONS660A70F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 700V 1.7A/9.6A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS660A70F

Description：MOSFET N-CH 700V 1.7A/9.6A 8DFN
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta), 9.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：660mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 138W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (5x6)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONS660A70F

AONS660A70F

Single FETs, MOSFETs Overview

The AONS660A70F is a 700V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 800V and a single-pulse drain current of 34A. The device offers a maximum on-resistance of 0.66 ohms at Vgs=10V and Id=2.5A, with a total gate charge of 14.5nC. Thermal resistance from junction to case is 0.9°C/W, while junction-to-ambient is 55°C/W. Operating temperature ranges from -55°C to 150°C. The component is housed in a DFN5x6F package.

Single FETs, MOSFETs Feature Summary

Proprietary aMOS5 technology for low on-resistance
Optimized switching parameters for improved EMI performance
Enhanced body diode for robustness and fast reverse recovery

Single FETs, MOSFETs Applications

Flyback converters for SMPS
Charger and PD Adapter designs
TV and lighting systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and reel specifications. Confirm that the DFN5x6F package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient switching and low conduction losses. The enhanced body diode characteristics make it suitable for hard-switching topologies. Consider the 800V breakdown margin for robust operation in noisy environments. Evaluate thermal dissipation capabilities based on the specific board copper area and airflow conditions.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS5 series of N-Channel Power MOSFETs from Alpha & Omega Semiconductor. The series focuses on optimizing switching speed and reducing electromagnetic interference. The DFN5x6F package provides a compact solution for surface-mount applications requiring high power density.