Single FETs, MOSFETs AONS66620 product image

AONS66620

$1.31
  • Description:N
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c2ad9a11dc57 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AONS66620 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS66620

  • Description:N
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:17.5A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1070 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Ta), 36.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (5x6)
  • Package / Case:8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AONS66620

AONS66620

Single FETs, MOSFETs Overview

The AONS66620 is a 60V N-Channel AlphaSGT™ Trench Power MOSFET in an 8-DFN (5x6) surface-mount package. It features a maximum drain-source voltage of 60V and continuous drain current ratings of 17.5A at ambient temperature and 24A at case temperature. The device exhibits low on-resistance, with RDS(ON) less than 9mΩ at VGS=10V and less than 11mΩ at VGS=8V. Key electrical parameters include a gate threshold voltage of 3.6V max, total gate charge of 25nC, and input capacitance of 1070pF. Thermal characteristics specify a junction-to-case resistance of 3.4°C/W and junction-to-ambient resistance of 55°C/W.

Single FETs, MOSFETs Feature Summary

  • Utilizes AlphaSGT™ trench technology to achieve low on-resistance and excellent figure of merit.
  • Features 100% unclamped inductive switching (UIS) testing for enhanced ruggedness.
  • Includes 100% gate resistance testing to ensure consistent switching performance.

Single FETs, MOSFETs Applications

  • Synchronous rectification in switch-mode power supplies
  • ATX and gaming power supply units
  • General high-efficiency switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging format and reel specifications. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the selected part number matches the required DFN 5x6 package dimensions for PCB layout compatibility.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 60V rating with moderate current handling capabilities in a compact footprint. Consider the thermal resistance values when designing heat dissipation strategies, particularly for synchronous rectification roles where conduction losses are significant. Evaluate the gate charge and threshold voltage to ensure compatibility with the intended driver circuitry.

Single FETs, MOSFETs Part Context

This device belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., which utilizes advanced trench MOSFET technology. The series is designed to offer improved performance metrics compared to standard planar devices, specifically targeting efficiency improvements in power conversion applications through reduced conduction and switching losses.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage class if supply constraints exist. Verify that any substitute maintains or exceeds the 60V breakdown voltage and compatible package dimensions. Ensure the replacement device offers similar thermal characteristics and switching speeds to maintain system stability.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current rating?

The continuous drain current is rated at 17.5A at an ambient temperature of 25°C and 24A at a case temperature of 25°C.

Is the device tested for avalanche energy?

Yes, the datasheet specifies that the device undergoes 100% unclamped inductive switching (UIS) testing.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3.0V, with a maximum specified value of 3.6V at a drain current of 250μA.

AONS66620AONS66620
$1.31
Buy Now