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AONS850A70 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AONS850A70 is a 700V N-Channel Power MOSFET utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 700V and a pulsed drain current of 28A. The device offers a typical on-resistance of 0.7 ohms at VGS=10V and ID=1.4A, with a gate charge of 11.5nC. Packaged in a DFN5x6F footprint, it supports junction temperatures up to 150°C and includes an enhanced body diode for robust reverse recovery performance.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component meets all applicable export control regulations and environmental compliance standards required for your target market before finalizing procurement orders.
Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. Evaluate the thermal resistance values relative to your board layout and heatsinking strategy to ensure operation within the 150°C junction temperature limit under expected load conditions.
This part belongs to Alpha & Omega Semiconductor's aMOS5 series, designed for high-efficiency power conversion. It serves as a discrete solution for medium-power AC-DC adapters and server power supplies where size constraints and electromagnetic interference are critical design factors.
No direct substitute part numbers are documented in the provided source material. Verify pinout compatibility and electrical ratings if considering alternative manufacturers for redesign purposes.
The absolute maximum drain-source voltage (BVDSS) is rated at 700V.
Yes, it features an enhanced body diode with a specified reverse recovery time of 230ns and peak reverse recovery current of 28A.
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