Single FETs, MOSFETs AONT21313C product image

AONT21313C

  • Description:MOSFET P-CH 30V 8A 6DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:880820754424 Category: Brand:

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AONT21313C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 8A 6DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONT21313C

  • Description:MOSFET P-CH 30V 8A 6DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:32mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-DFN (2x2)
  • Package / Case:6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for AONT21313C

AONT21313C

Single FETs, MOSFETs Overview

The AONT21313C is a P-Channel MOSFET utilizing advanced trench technology, housed in an 8-pin DFN 2x2B surface-mount package. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -7.4A at VGS=-10V. The device offers low on-resistance, specified as less than 32mΩ at VGS=-10V and less than 55mΩ at VGS=-4.5V. Key electrical parameters include a gate threshold voltage ranging from -1.2V to -2.2V, a maximum gate-source voltage of ±20V, and a junction temperature range of -55°C to 150°C. Thermal characteristics define a maximum junction-to-ambient thermal resistance of 80°C/W.

Single FETs, MOSFETs Feature Summary

  • Utilizes latest advanced trench technology for optimized performance
  • Provides high current capability with low on-resistance characteristics
  • Includes integrated electrostatic discharge protection mechanisms

Single FETs, MOSFETs Applications

  • Notebook AC-in load switching
  • Battery protection charge and discharge circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity of 3000 units. Confirm that the component meets RoHS and halogen-free compliance standards prior to integration. Ensure the design accommodates the specified thermal resistance values for the DFN 2x2B package to maintain safe operating temperatures under expected load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact surface-mount solutions with robust power handling capabilities. The low gate threshold voltage facilitates efficient drive logic compatibility. Evaluate the thermal management requirements against the provided junction-to-ambient resistance data to ensure reliable operation within the specified temperature limits during continuous duty cycles.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of discrete semiconductors designed for power management applications. The DFN 2x2B package provides a small footprint suitable for space-constrained portable electronics. The product line emphasizes efficiency and reliability through advanced trench fabrication processes tailored for modern mobile computing platforms.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

AONT21313CAONT21313C

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