AONX36324

$0.49

Description：MOSFET 2N-CH 30V 21A 8DFN
Series：-

SKU:b9d8f728b497 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 21A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs：4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1145pF @ 15V, 2265pF @ 15V
Power - Max：3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-VDFN Exposed Pad
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AONX36324

Overview

The AONX36324 is a dual N-channel MOSFET from Alpha & Omega Semiconductor, rated at 30V drain-source voltage. It features bottom source technology for low RDS(on). The device supports continuous currents of 21A (Ta) and 55A (Tc) for one channel, and 32A (Ta) and 85A (Tc) for the other. Power dissipation reaches 39W (Tc). It operates within a junction temperature range of -55°C to 175°C. The component is housed in an 8-DFN (5x6) surface-mount package.

Feature Summary

Dual asymmetric N-channel configuration with bottom source technology
Very low on-resistance for enhanced power efficiency
Low gate charge characteristics for improved switching performance
High current capability suitable for demanding power applications

Applications

Power management circuits
Motor control systems
DC-DC converter designs

Procurement Notes

Verify the specific datasheet version and ordering suffixes directly with Alpha & Omega Semiconductor or authorized distributors. Confirm that the 8-DFN (5x6) package dimensions match your PCB footprint requirements. Ensure thermal management solutions align with the specified power dissipation ratings under your operating conditions. Check for RoHS compliance status if required by your manufacturing standards.

Selection Notes

Select this component when a dual N-channel solution with asymmetric current handling is required in a compact 8-DFN package. The bottom source technology offers advantages in thermal performance compared to traditional top-side source designs. Consider the 30V rating and high current capabilities for low-voltage, high-current applications where space is constrained.

Part Context

The AONX36324 belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs utilizing proprietary bottom source technology. This series emphasizes low on-resistance and high current density in small surface-mount packages. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations in compact power supply designs.