AONZ66412

AONZ66412

$0.75
  • Description:MOSFET 2N-CH 40V 32A 8DFN
  • Series:AlphaSGT™

SKU:84f60ba09c19 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 32A 8DFN
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:32A (Ta), 182A (Tc)
  • Rds On (Max) @ Id, Vgs:2.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 20V
  • Power - Max:5W (Ta), 147W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-DFN-EP (5x6)
  • Grade:-
  • Qualification:-

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AONZ66412

Overview

The AONZ66412 is a surface-mount N-channel XSPairFET MOSFET array manufactured by Alpha & Omega Semiconductor. It integrates two devices in an 8-DFN-EP (5x6) package. The component supports a drain-source voltage of 40 V. Continuous drain current ratings are specified as 32 A at ambient temperature and 182 A at case temperature. Power dissipation capabilities are rated at 5 W under ambient conditions and 147 W under case conditions.

Feature Summary

  • Integrates dual N-channel MOSFETs into a single compact surface-mount package to reduce PCB footprint.
  • Designed specifically for high-efficiency Buck-Boost converter topologies.
  • Optimized layout simplifies the implementation of 4-switch architectures.

Applications

  • USB PD 3.1 Extended power delivery systems
  • Buck-Boost converter circuits
  • Portable electronic device power management

Procurement Notes

Verify the specific manufacturer part number against official Alpha & Omega Semiconductor documentation to ensure correct component identification. Confirm that the required package type and electrical specifications align with the design requirements before procurement. Cross-reference datasheets for thermal performance data relevant to the intended application environment.

Selection Notes

Select this component when space constraints require replacing multiple discrete MOSFETs with a single integrated solution. Consider the 40 V rating and current capabilities relative to the system's peak load requirements. Evaluate the thermal performance characteristics provided in the official datasheet to ensure adequate heat dissipation within the target enclosure.

Part Context

This device belongs to the XSPairFET family, which focuses on integrating paired transistors to improve power density. It serves as a direct replacement for two separate DFN5x6 MOSFETs, offering a simplified layout process for designers implementing complex switching regulators in modern portable electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

AONZ66412AONZ66412
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