AOP610

$0.24

Description：MOSFET N/P-CH 30V 8PDIP
Series：-

SKU:5aa0a3dbb49a Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 8PDIP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：24mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：630pF @ 15V
Power - Max：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：8-DIP (0.300", 7.62mm)
Supplier Device Package：8-PDIP
Grade：-
Qualification：-

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AOP610

Overview

The AOP610 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates an n-channel MOSFET with a Schottky diode and a p-channel MOSFET in a single PDIP-8 package. The n-channel device provides a drain-source voltage of 30V, continuous drain current of 7.7A at 25°C, and on-resistance below 24mΩ at VGS=10V. The p-channel counterpart offers -30V breakdown, -6.2A current capability, and on-resistance under 39mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to 150°C.

Feature Summary

Complementary N-channel and P-channel trench technology for high-side switching applications
Integrated Schottky diode parallel to the N-channel FET to reduce body diode losses
ESD protection rated at 2000V (HBM)
Lead-free construction compliant with ROHS specifications

Applications

Level shifted high side switches
Consumer market power management circuits
General purpose low voltage switching

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status matches project requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines. Validate pinout compatibility with target PCB footprint prior to assembly.

Selection Notes

Select this component for applications requiring matched complementary switching pairs in a compact through-hole format. Consider the integrated Schottky diode when minimizing reverse recovery losses is critical. Verify thermal dissipation capabilities against specific board copper layout constraints.

Part Context

This part belongs to Alpha & Omega Semiconductor's complementary MOSFET portfolio. It utilizes advanced trench technology to achieve low on-resistance and gate charge characteristics suitable for consumer electronics. The PDIP-8 packaging facilitates manual assembly and prototyping workflows.