AOSD21311C

$0.89

Description：MOSFET 2P-CH 30V 5A 8SOIC
Series：-

SKU:b03ca9592f86 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 5A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Rds On (Max) @ Id, Vgs：42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：720pF @ 15V
Power - Max：1.7W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AOSD21311C

Overview

The AOSD21311C is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a -30V drain-source voltage (BVDSS) and a continuous drain current of -5A at VGS=-10V. The device utilizes advanced trench technology to achieve low on-resistance, specified as less than 42mΩ at VGS=-10V and less than 64mΩ at VGS=-4.5V. It is housed in an SO-8 surface-mount package with tape and reel packaging. The component operates within a junction temperature range of -55°C to 150°C and includes typical ESD protection rated at HBM Class 1C.

Feature Summary

Dual P-channel configuration utilizing advanced trench technology for optimized performance
Low on-resistance characteristics supporting high current capability
Comprehensive testing including 100% UIS and Rg verification

Applications

Notebook AC-in load switching
Battery protection charge and discharge circuits

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the requested variant matches the required package type and electrical specifications. Ensure compliance with RoHS and halogen-free standards if mandated by the design requirements. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and availability status.

Selection Notes

Select this component for applications requiring dual P-channel switching with low on-resistance. Evaluate thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet. Consider the gate threshold voltage and drive levels to ensure proper saturation at the intended operating voltage. Verify that the package dimensions fit the target PCB layout constraints.

Part Context

The AOSD21311C belongs to the family of dual MOSFETs produced by Alpha & Omega Semiconductor. It is designed for power management applications where space efficiency and switching performance are critical. The device integrates two independent P-channel MOSFETs in a single compact package, facilitating simplified circuit designs for load switching and battery protection functions.