ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
AOSP36326C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 12A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOSP36326C
- Description：MOSFET N-CH 30V 12A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：542 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for AOSP36326C
Single FETs, MOSFETs Overview
The AOSP36326C is a surface-mount N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor. It features a 30V drain-source voltage rating and a continuous drain current of 12A at 25°C ambient temperature. The device utilizes trench technology to achieve a maximum on-resistance of 11mΩ at VGS=10V and 17mΩ at VGS=4.5V. Packaged in an 8-SOIC format, it supports a junction temperature range from -55°C to 150°C with a power dissipation capacity of 2.5W at 25°C.
Single FETs, MOSFETs Feature Summary
- Utilizes Trench Power MOSFET technology for low on-resistance performance
- Capable of handling high current levels within specified thermal limits
- Features low gate charge characteristics for efficient switching operations
- Verified against Unclamped Inductive Switching (UIS) stress conditions
Single FETs, MOSFETs Applications
- DC/DC Converters in Computing, Servers, and POL
- Isolated DC/DC Converters in Telecom and Industrial systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm package type and reel configuration. Ensure compliance with RoHS and Halogen-Free standards required for your assembly process. Confirm that the SO-8 form factor matches your PCB footprint design constraints before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 30V N-channel MOSFET is required for compact surface-mount designs. Evaluate the 11mΩ RDS(ON) specification against your load requirements at VGS=10V. Consider the 8-SOIC package dimensions for space-constrained layouts where standard through-hole options are unsuitable.
Single FETs, MOSFETs Part Context
This part belongs to the Alpha & Omega Semiconductor AOSP363 series of discrete semiconductors. It is classified as a single N-channel enhancement mode field-effect transistor designed for general-purpose power switching applications requiring moderate voltage ratings and efficient thermal management in small packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 30V N-channel MOSFETs in the 8-SOIC package. Verify pinout compatibility and ensure replacement devices meet or exceed the 12A continuous current and 11mΩ on-resistance specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
