AOT125A60L

$1.67

Description：MOSFET N-CH 600V 28A TO220
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:7f5b7938bc8e Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOT125A60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 28A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT125A60L

Description：MOSFET N-CH 600V 28A TO220
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2993 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT125A60L

AOT125A60L

Single FETs, MOSFETs Overview

The AOT125A60L is a 600V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary aMOS5 technology. It features a maximum drain-source breakdown voltage of 600V and a continuous drain current of 28A at case temperature. The device exhibits a typical on-resistance of 0.108 ohms and a maximum of 0.125 ohms at VGS=10V. Key dynamic parameters include a total gate charge of 39nC and a reverse recovery time of 375ns for the body diode. Thermal resistance from junction to case is 0.35°C/W, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Proprietary aMOS5 technology ensures low on-resistance and optimized switching performance.
Enhanced body diode design provides robustness and fast reverse recovery characteristics.
Optimized switching parameters contribute to improved electromagnetic interference (EMI) performance.

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power factor correction (PFC) stages

Single FETs, MOSFETs Procurement Notes

Verify the specific package type required, as the AOT125A60L designation corresponds to the TO-220 variant within the shared datasheet family that also includes TO-220F and TO-263 packages. Confirm electrical parameter compliance against the official Alpha & Omega Semiconductor datasheet prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling with efficient thermal dissipation in through-hole configurations. Compare the 0.35°C/W junction-to-case thermal resistance against alternative packages like TO-220F or TO-263 if surface mount assembly is preferred. Evaluate the 28A continuous current rating against peak load requirements and ensure the gate drive voltage supports the 10V threshold for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS5 series of power transistors designed for general-purpose switching applications. It shares core electrical specifications with the AOTF125A60L and AOB125A60L models, differing primarily in physical packaging. The TO-220 form factor facilitates standard through-hole mounting techniques suitable for various industrial and consumer power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided source material. Engineers should evaluate other 600V N-Channel MOSFETs with comparable RDS(ON), current ratings, and thermal characteristics from Alpha & Omega or other manufacturers, ensuring pinout compatibility for the TO-220 package.