Single FETs, MOSFETs AOT12N65 product image

AOT12N65

  • Description:MOSFET N-CH 650V 12A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:69f92bc32e87 Category: Brand:

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AOT12N65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 12A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT12N65

  • Description:MOSFET N-CH 650V 12A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:720mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2150 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):278W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT12N65

AOT12N65

Single FETs, MOSFETs Overview

The AOT12N65 is a 650V N-Channel MOSFET designed for AC-DC applications. It features a continuous drain current of 12A at VGS=10V and a maximum on-resistance of 0.72Ω at the same gate voltage. The device includes guaranteed avalanche capability, having undergone 100% UIS testing. Electrical characteristics include a gate threshold voltage ranging from 3V to 4.5V and a total gate charge of up to 48nC. Thermal performance specifies a junction-to-case resistance of 0.45°C/W with a power dissipation rating of 75W.

Single FETs, MOSFETs Feature Summary

  • Fabricated using an advanced high-voltage process optimized for robustness in offline power supply designs.
  • Features low on-resistance and capacitance values to facilitate rapid adoption into existing and new circuit topologies.
  • Includes guaranteed avalanche energy handling capabilities verified through comprehensive unclamped inductive switching testing.

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • AC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the AOT12N65 designation corresponds to the TO-220 form factor. Confirm that the component meets consumer market qualification standards, as critical life support applications are explicitly excluded from authorization. Ensure sourcing channels provide original manufacturer documentation to validate electrical parameters against the official datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring 650V blocking capability with moderate current handling around 12A. The TO-220 package offers a thermal resistance of 0.45°C/W, suitable for heatsink-assisted cooling. Consider the 0.72Ω maximum on-resistance for conduction loss calculations. Verify that the operating environment aligns with the specified -55°C to 150°C junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the AOS family of high-voltage MOSFETs utilizing advanced fabrication processes. It shares functional similarities with variants like the AOTF12N65 and AOB12N65, which differ primarily in packaging formats such as TO-220F and TO-263. The core electrical performance remains consistent across these package options, allowing for design flexibility based on board space and thermal management requirements.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers: None identified in source material.

AOT12N65AOT12N65

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