AOT1N60

Single FETs, MOSFETs Overview

The AOT1N60 is a single N-channel MOSFET from Alpha & Omega Semiconductor, designed for high-voltage applications. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 1.3 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of less than 9 Ω when driven by a gate-source voltage of 10 V. Packaged in a TO-220 format, it supports a junction temperature range of -55°C to 150°C with a power dissipation rating of 41.7 W.

Single FETs, MOSFETs Feature Summary

• Advanced high-voltage MOSFET process technology ensures robust performance in AC-DC converter designs.
• Guaranteed avalanche capability allows for reliable operation under transient energy stress conditions.
• Optimized low input capacitance (Ciss) and reverse transfer capacitance (Crss) facilitate efficient switching.
• Comprehensive testing includes 100% verification of Unclamped Inductive Switching (UIS) and gate resistance.

Single FETs, MOSFETs Applications

• Offline power supply designs
• AC-DC conversion circuits
• General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before integration. Confirm that the TO-220 package dimensions match the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values under actual operating loads.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current handling around 1.3 A. The low Rds(on) specification helps minimize conduction losses in efficiency-critical systems. Verify that the gate drive voltage aligns with the 10 V test condition for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the general-purpose discrete semiconductor category within Alpha & Omega Semiconductor's portfolio. It utilizes standard silicon MOSFET technology optimized for cost-effective, high-reliability power switching. The device is distinct from higher-current variants or different packaging options within the same voltage class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600 V rating, 1.3 A current capacity, and TO-220 package. Verify pinout compatibility and thermal characteristics. Cross-reference with other manufacturers' 600 V N-channel MOSFETs ensuring identical electrical limits and mounting requirements.