AOT27S60L

$3.57

Description：MOSFET N-CH 600V 27A TO220
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:d9f703a6c270 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOT27S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 27A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT27S60L

Description：MOSFET N-CH 600V 27A TO220
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：160mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1294 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT27S60L

AOT27S60L

Single FETs, MOSFETs Overview

The AOT27S60L is a through-hole N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the αMOS™ high voltage process. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 27 A at 25°C case temperature. The device has a maximum on-resistance (RDS(on)) of 0.16 Ω at VGS=10V and ID=13.5A. Key dynamic parameters include a typical gate charge (Qg) of 26 nC and an effective output capacitance energy (Eoss) of 6 μJ at 400 V. It supports a peak pulsed drain current of 110 A and offers 100% UIS testing.

Single FETs, MOSFETs Feature Summary

Fabricated using advanced αMOS™ high voltage process for robust switching performance.
Guaranteed avalanche capability with 100% Unclamped Inductive Switching (UIS) testing.
Low total gate charge and stored output capacitance energy for efficient operation.
High dv/dt ruggedness suitable for demanding offline power supply designs.

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high reliability
Power conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches TO-220 requirements. Ensure ordering suffixes align with specific thermal or packaging variants if applicable. Review RoHS compliance status prior to integration into regulated assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600 V blocking voltage and 27 A continuous current handling in a TO-220 package. Consider the low RDS(on) and Qg values for efficiency optimization. Verify thermal management capabilities based on the specified junction-to-case resistance and power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the AOT27S60 family, which includes surface-mount and leadless variants such as AOB27S60L and AOTF27S60L. All variants share identical electrical characteristics but differ in physical packaging and thermal interface properties. The series is designed for general-purpose high-voltage switching applications.

Single FETs, MOSFETs Replacement Considerations

Direct functional equivalents within the same family include AOB27S60L and AOTF27S60L. Substitution requires verifying package compatibility and ensuring thermal resistance differences do not exceed design margins.