AOT2N60

Single FETs, MOSFETs Overview

The AOT2N60 is an N-Channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 2 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of less than 4.4 Ω when driven at Vgs = 10 V. Fabricated using an advanced high-voltage MOSFET process, it offers low input capacitance (Ciss) and reverse transfer capacitance (Crss). The component is designed for robustness in offline power supply applications.

Single FETs, MOSFETs Feature Summary

• Advanced high-voltage MOSFET process technology
• Guaranteed avalanche capability
• Low input and reverse transfer capacitance

Single FETs, MOSFETs Applications

• Offline power supply designs
• AC-DC converter circuits
• Consumer electronics power stages

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and package marking to ensure compatibility with existing board layouts. Confirm that the 600 V rating and 2 A current limit align with the target application's thermal and electrical requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for cost-sensitive offline power supplies requiring moderate voltage blocking and low current handling. Its low capacitance values support efficient switching performance in standard AC-DC topologies without complex gate drive requirements.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor’s general-purpose N-Channel MOSFET lineup. It utilizes trench technology optimized for high-voltage operation. The device is commonly used as a primary switch or synchronous rectifier in isolated power converters.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AOD2N60 and AOU2N60 from the same manufacturer. Cross-brand replacements must match the 600 V Vdss, 2 A Id, and TO-252/TO-220 package dimensions.