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AOT66918L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.
The AOT66918L is a surface-mount N-channel Power MOSFET from Alpha & Omega Semiconductor, housed in a TO-263 (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 33 A at ambient temperature or 120 A at case temperature. The device has a maximum power dissipation of 10 W at ambient and 375 W at case conditions. Key electrical parameters include a gate threshold voltage of 3.7 V max at 250 µA, a gate charge of 105 nC max at 10 V, and an on-resistance of 5 mΩ max at 20 A and 10 V. The input capacitance is 6500 pF max at 50 V, with a maximum gate-source voltage of ±20 V.
Verify the exact part number against official manufacturer documentation to ensure compatibility. Confirm that the suffix 'L' corresponds to the specific tape and reel packaging variant required for your assembly process. Cross-reference the datasheet revision date to validate all electrical specifications before finalizing design integration.
Select this component when a 100 V rating and high current capacity are required in a D2PAK footprint. Evaluate thermal performance based on the specified ambient and case power dissipation limits. Ensure the driving circuit can provide the necessary gate voltage levels to achieve the minimum on-resistance specified in the datasheet.
This component belongs to the AlphaSGT™ series of superjunction MOSFETs from Alpha & Omega Semiconductor. These devices are designed for high-efficiency power conversion applications. The manufacturer specializes in discrete power devices and power management ICs for various electronic equipment.
Check for direct substitutes within the same AlphaSGT™ family or other manufacturers offering identical 100 V, D2PAK N-channel MOSFETs with comparable Rds(on) and current ratings. Verify pinout compatibility and thermal characteristics before substitution.
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