AOT7S60L

Description：MOSFET N-CH 600V 7A TO220
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:601b4e3ad57c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOT7S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 7A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT7S60L

Description：MOSFET N-CH 600V 7A TO220
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：372 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT7S60L

AOT7S60L

Single FETs, MOSFETs Overview

The AOT7S60L is a through-hole N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the αMOS™ process. It features a drain-source voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The device has a maximum on-resistance of 0.6Ω at VGS=10V and ID=3.5A. Key electrical parameters include a typical gate charge of 8.2nC, a threshold voltage range of 2.7V to 3.9V, and an avalanche energy rating of 341mJ. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Features guaranteed avalanche capability with 100% UIS testing for robustness in switching applications.
Designed with low RDS(on), Qg, and EOSS to facilitate adoption in offline power supply designs.
Includes a body diode rated for repetitive avalanche and high dv/dt ruggedness.

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring avalanche robustness

Single FETs, MOSFETs Procurement Notes

Verify the datasheet revision date and specific package type (TO-220) against project requirements. Confirm that the component meets RoHS3 standards if required by the end product. Ensure the design accounts for the specified thermal resistance values when calculating heat dissipation under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 600V N-channel MOSFET with moderate current handling capabilities. Consider the 0.6Ω on-resistance and 8.2nC gate charge for efficiency calculations. Verify that the TO-220 package fits the available PCB space and thermal management strategy.

Single FETs, MOSFETs Part Context

This part belongs to the AOT7S60 family, which includes surface-mount variants like AOB7S60 and AOTF7S60. All share the same core semiconductor characteristics but differ in packaging. The 'L' suffix indicates a halogen-free version of the standard AOT7S60 through-hole transistor.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When selecting alternatives, ensure matching VDS, IDM, and RDS(on) specifications. Verify that any replacement also supports the required avalanche energy ratings and thermal performance.