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Product Detailed Parameters
- Description：IGBT 650V 16A TO-220
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2.56V @ 15V, 8A
- Power - Max：83 W
- Switching Energy：130µJ (on), 110µJ (off)
- Input Type：Standard
- Gate Charge：14 nC
- Td (on/off) @ 25°C：6ns/71ns
- Test Condition：400V, 8A, 37.5Ohm, 15V
- Reverse Recovery Time (trr)：195 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The AOT8B65M3 is a single-switch Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor. It features a collector-emitter voltage rating of 650V and a continuous collector current capacity of 16A. The device utilizes the latest Alpha IGBT technology to deliver high-performance switching capabilities. It is housed in a TO-220 through-hole package, designed for robust thermal management and reliable operation in power conversion applications requiring efficient energy handling.
Feature Summary
- Integrates an anti-parallel diode with soft and fast recovery characteristics
- Utilizes advanced Alpha IGBT technology for optimized performance
- Designed as a single switch solution for simplified circuit implementation
Applications
- Motor drive systems
- Fan and pump control circuits
- Vacuum cleaner power modules
- Home appliance inverters
Procurement Notes
Verify the specific suffix M3 against the manufacturer datasheet to confirm pinout and thermal specifications. Ensure the TO-220 through-hole mounting style aligns with the target PCB or chassis design requirements. Cross-reference the 650V/16A ratings with the actual load conditions to maintain adequate safety margins during operation.
Selection Notes
Select this component when a discrete IGBT solution with integrated freewheeling diode is required. The TO-220 package facilitates direct mounting to heat sinks for high-power dissipation scenarios. Consider the soft recovery diode characteristics for reducing electromagnetic interference in inductive load switching environments compared to standard hard-recovery alternatives.
Part Context
This part belongs to Alpha & Omega Semiconductor's discrete power transistor portfolio. It complements their MOSFET and wide bandgap offerings by providing a bipolar switching option suitable for medium-to-high voltage industrial applications. The product line targets sectors demanding reliable power conversion components for consumer electronics and automotive subsystems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate driver circuits when considering alternative IGBT models from other manufacturers.
