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AOT8N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 8A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOT8N50
- Description：MOSFET N-CH 500V 8A TO220
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1042 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：192W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for AOT8N50
Single FETs, MOSFETs Overview
The AOT8N50 is a 500V N-Channel MOSFET fabricated using an advanced high voltage process. It features a maximum continuous drain current of 9A at TC=25°C and a typical on-resistance of 0.63Ω at VGS=10V. The device includes guaranteed avalanche capability, with single-pulse energy rated at 307mJ. Electrical characteristics include a gate threshold voltage of 4V and total gate charge of 28nC. Thermal resistance from junction to case is 0.65°C/W for the TO-220 package.
Single FETs, MOSFETs Feature Summary
- Advanced high voltage MOSFET process designed for robustness in AC-DC applications
- Guaranteed avalanche capability with 100% UIS testing
- Low on-resistance and capacitance values for efficient offline power supply designs
Single FETs, MOSFETs Applications
- Offline power supply designs
- AC-DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant required, as the datasheet covers both AOT8N50 (TO-220) and AOTF8N50 (TO-220F). Confirm that the component meets RoHS standards if environmental compliance is mandatory for the assembly. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the documentation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 500V blocking capability with moderate current handling up to 9A. Consider the thermal resistance specifications when designing heatsinking strategies. Verify that the gate drive voltage supports the 10V condition necessary to achieve the minimum on-resistance specified in the electrical characteristics table.
Single FETs, MOSFETs Part Context
This part belongs to Alpha & Omega Semiconductor's lineup of high-voltage discrete semiconductors. It utilizes trench technology to optimize performance metrics such as on-resistance and switching speeds. The device is intended for general-purpose power switching applications where reliability and avalanche ruggedness are critical design factors.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility between TO-220 and TO-220F packages if substituting with the AOTF8N50 variant. Verify that alternative components meet the same 500V breakdown voltage and 9A current rating requirements.
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