AOTE21115C

$0.20

Description：MOSFET 2P-CH 20V 5.1A 8TSSOP
Series：-

SKU:0650dd106b40 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 5.1A 8TSSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
Rds On (Max) @ Id, Vgs：40mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：930pF @ 10V
Power - Max：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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AOTE21115C

Overview

The AOTE21115C is a dual P-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It utilizes Trench Power MOSFET technology to achieve low on-resistance and gate charge characteristics. The device features a drain-source voltage of -20V and supports continuous drain currents up to -4.9A at VGS=-4.5V. On-resistance values are specified as less than 44mΩ at VGS=-4.5V, 57mΩ at VGS=-2.5V, and 77mΩ at VGS=-1.8V. It is housed in an 8-TSSOP surface-mount package with a maximum junction temperature rating of 150°C.

Feature Summary

Dual P-channel configuration within a single compact package
Trench Power MOSFET technology for optimized performance
Low gate charge capability for efficient switching operations

Applications

Load switch implementations
Power management circuits requiring dual channel control

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging format. Confirm that the component meets RoHS and Halogen-Free compliance requirements for your assembly process. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.

Selection Notes

Evaluate thermal resistance values based on the specific PCB copper area and airflow conditions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider the maximum pulsed drain current limits when designing for transient load conditions.

Part Context

This component belongs to the AOTE series of dual P-channel MOSFET arrays from Alpha & Omega Semiconductor. It is designed for applications requiring two independent channels in a small footprint. The device complements other power management solutions by providing integrated switching capabilities.

Replacement Considerations

Check for compatible dual P-channel MOSFETs with similar -20V ratings and comparable RDS(ON) specifications. Verify pinout compatibility with the 8-TSSOP package before substitution.