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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7A 8TSSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：20mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 10V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The AOTE32136C is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It utilizes Trench Power MOSFET technology to achieve low on-resistance and gate charge characteristics. The device features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 7A at VGS=4.5V. The maximum static drain-source on-resistance (RDS(ON)) is less than 20mΩ at VGS=4.5V and less than 26mΩ at VGS=2.5V. It is housed in an 8-pin TSSOP package with a tape and reel form factor.
Feature Summary
- Dual N-Channel Configuration
- Trench Power MOSFET Technology
- Low On-Resistance
- Low Gate Charge
Applications
- Load Switching
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement, as suffixes may indicate variations in packaging or testing standards. Confirm that the component meets RoHS and Halogen-Free compliance requirements for your intended assembly process. Ensure the selected part number matches the required package type and quantity format.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. Evaluate the thermal performance based on the junction-to-ambient resistance values provided in the datasheet, as these depend heavily on the user's specific PCB copper area and airflow conditions. Verify that the gate drive voltage aligns with the specified RDS(ON) thresholds.
Part Context
This component belongs to the AOTE series of dual MOSFET arrays from Alpha & Omega Semiconductor. It is designed for applications requiring two independent N-channel switches in a single package. The device is distinct from single-channel MOSFETs and other power modules offered by the manufacturer.
Replacement Considerations
No publicly confirmed substitute part numbers are available in the source material.
FAQ
What is the maximum junction temperature for the AOTE32136C?
The maximum junction temperature is 150°C.
Is the AOTE32136C compliant with environmental regulations?
Yes, the device is RoHS and Halogen-Free compliant.
What is the package type for the AOTE32136C?
The device is available in an 8-TSSOP package.
