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Product Detailed Parameters
- Description：IGBT 650V 20A TO-220
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 10A
- Power - Max：30 W
- Switching Energy：180µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：12ns/91ns
- Test Condition：400V, 10A, 30Ohm, 15V
- Reverse Recovery Time (trr)：263 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The AOTF10B65M1 is a 650V, 10A AlphaIGBT in a TO-220F package. It features a collector-emitter saturation voltage of 1.6V at 25°C and 1.95V at 150°C. The device includes an integrated anti-parallel diode with a reverse recovery time of 263ns at 25°C. Total gate charge is 24nC, and the short-circuit withstand time is 5µs. Thermal resistance from junction to case is 4.2°C/W for the IGBT and 7°C/W for the diode.
Feature Summary
- Latest AlphaIGBT technology providing high efficiency and robustness
- Integrated very fast and soft recovery freewheeling diode
- High short-circuit ruggedness with 5µs withstand capability
- Low VCE(sat) enabling high operational efficiencies
Applications
- Motor Drives
- Sewing Machines
- Home Appliances
- Fan, Pumps, Vacuum Cleaner
- Other Hard Switching Applications
Procurement Notes
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the requested part number matches the exact electrical characteristics and thermal performance required for the target application. Ensure compliance with RoHS and REACH directives as specified in the manufacturer's environmental policy.
Selection Notes
Select this component for hard switching applications requiring high efficiency and low switching losses. Consider the 650V breakdown voltage and 10A continuous current rating for appropriate load matching. Evaluate the thermal resistance values to ensure adequate heat sinking for the intended operating temperature range.
Part Context
This component belongs to the AlphaIGBT family from Alpha & Omega Semiconductor. It utilizes advanced high-voltage MOSFET processes designed for AC-DC applications. The series emphasizes low RDS(on), Ciss, and Crss alongside guaranteed avalanche capability for offline power supply designs.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided datasheet.
FAQ
What is the maximum short-circuit withstand time?
The maximum short-circuit withstand time is 5µs under conditions of VGE=15V, VCC≤400V, and TJ≤150°C.
What is the thermal resistance from junction to case?
The maximum IGBT junction-to-case thermal resistance is 4.2°C/W, and the maximum diode junction-to-case thermal resistance is 7°C/W.
What is the typical reverse recovery time of the integrated diode?
The typical diode reverse recovery time (trr) is 263ns at 25°C and 262ns at 150°C, measured at IF=10A, di/dt=200A/ms, and VCC=400V.
