Single FETs, MOSFETs AOTF11C60PL product image

AOTF11C60PL

  • Description:MOSFET N-CH 600V 11A TO220-3F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:11dda0be2984 Category: Brand:

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AOTF11C60PL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 11A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF11C60PL

  • Description:MOSFET N-CH 600V 11A TO220-3F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2333 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):37W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF11C60PL

AOTF11C60PL

Single FETs, MOSFETs Overview

The AOTF11C60PL is a 600V N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power AlphaMOS-II technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The device has a maximum on-resistance of 0.4Ω at VGS=10V and a typical gate charge of 31nC. It is housed in a TO-220F Green package with a junction-to-case thermal resistance of 3.4°C/W.

Single FETs, MOSFETs Feature Summary

  • Incorporates Trench Power AlphaMOS-II technology for low on-resistance and fast switching performance.
  • Features high current capability suitable for demanding power conversion applications.
  • Includes 100% UIS (Unclamped Inductive Switching) testing to ensure robustness against avalanche events.

Single FETs, MOSFETs Applications

  • General lighting for LED and CCFL
  • AC/DC power supplies for industrial applications
  • AC/DC power supplies for consumer electronics
  • AC/DC power supplies for telecom equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' indicates the Green compliant variant when sourcing. Confirm the package type matches the required TO-220F footprint. Ensure the component meets the intended environmental standards for the target application. Cross-reference the manufacturer's ordering information to confirm availability and lead times.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 600V rating with moderate current handling up to 11A. Consider the 0.4Ω maximum RDS(ON) for conduction loss calculations. Evaluate the thermal management requirements based on the 3.4°C/W junction-to-case resistance. Verify compatibility with standard gate drive voltages around 10V.

Single FETs, MOSFETs Part Context

This part belongs to the AOTF series of N-Channel MOSFETs by Alpha & Omega Semiconductor. It is designed as a general-purpose power switch for various AC/DC converter topologies. The device is optimized for efficiency in consumer, industrial, and telecom power supply applications.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 600V ratings and comparable RDS(ON) values. Ensure pinout compatibility with the TO-220F package. Verify that replacement devices meet the same UIS ruggedness requirements if used in inductive load scenarios.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (BVDSS) is 600V.

Is the device tested for unclamped inductive switching?

Yes, the AOTF11C60PL undergoes 100% UIS testing to ensure reliability under avalanche conditions.

AOTF11C60PLAOTF11C60PL

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