AOTF15S65L

$3.14

Description：MOSFET N-CH 650V 15A TO220-3F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:3f4ddc3d9b6c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF15S65L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 15A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF15S65L

Description：MOSFET N-CH 650V 15A TO220-3F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：290mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：841 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：34W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF15S65L

AOTF15S65L

Single FETs, MOSFETs Overview

The AOTF15S65L is a through-hole N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOS™ high-voltage process. It features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 15 A at case temperature (Tc). The maximum on-resistance (Rds(on)) is 0.29 Ω at Vgs=10V and Id=7.5A. Key dynamic parameters include a typical total gate charge (Qg) of 17.2 nC and an effective output capacitance energy (Eoss) of 3.6 mJ at 400 V. The device supports a pulsed drain current (Idm) of 60 A and has been tested for 100% unclamped inductive switching (UIS) capability.

Single FETs, MOSFETs Feature Summary

Fabricated using advanced aMOS™ high-voltage process technology designed for robust performance in switching applications.
Guaranteed avalanche capability with 100% UIS testing to ensure reliability under inductive load conditions.
Optimized low Rds(on), gate charge (Qg), and Eoss characteristics to facilitate rapid adoption in offline power supply designs.

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high voltage ruggedness

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the datasheet covers multiple packages including TO-220, TO-220F, and TO-263. Confirm that the ordered component matches the AOTF15S65L designation for the TO-220F package. Ensure compliance with export control rules and applicable legal requirements before purchase.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 650 V blocking capability and 15 A continuous current handling in a through-hole configuration. Consider the thermal resistance values provided for the specific package variant when designing heatsinking solutions. Evaluate the safe operating area (SOA) curves to ensure operation remains within limits for the intended pulse widths and duty cycles.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS™ series of power transistors manufactured by Alpha & Omega Semiconductor. It shares core electrical specifications with variants such as AOT15S65L, AOB15S65L, and AOTF15S65, differing primarily in physical packaging. The series is engineered to deliver high performance levels in high-voltage switching environments.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' components with similar voltage and current ratings.