Single FETs, MOSFETs AOTF256L product image

AOTF256L

$0.51
  • Description:MOSFET N-CH 150V 3A/12A TO220-3F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:9071f35e097a Category: Brand:

  
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AOTF256L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 150V 3A/12A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF256L

  • Description:MOSFET N-CH 150V 3A/12A TO220-3F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:85mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1165 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 33W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF256L

AOTF256L

Single FETs, MOSFETs Overview

The AOTF256L is a 150V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum drain-source voltage of 150V and a continuous drain current of 12A at 25°C case temperature. The on-resistance is less than 85mΩ at VGS=10V and less than 100mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 2.8V max, total gate charge of 22nC at 10V, and input capacitance of 1165pF. Thermal characteristics specify a junction-to-case resistance of 4.6°C/W and a junction-to-ambient resistance of 60°C/W.

Single FETs, MOSFETs Feature Summary

  • Optimized trench MOSFET technology designed to minimize both conduction and switching power losses through low RDS(ON) and capacitance values.
  • Validated for reliability with 100% testing for Unclamped Inductive Switching (UIS) capability and gate resistance.
  • Capable of handling repetitive avalanche energy ratings suitable for inductive load applications.

Single FETs, MOSFETs Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • Industrial power supplies
  • LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant and manufacturing revision against the latest Alpha & Omega Semiconductor datasheet before integration. Confirm that the thermal management design accommodates the specified junction-to-ambient and junction-to-case thermal resistances for the intended operating environment. Ensure compliance with export control regulations and legal requirements applicable to the destination region.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 150V blocking capability with efficient high-frequency performance. The logic-level gate drive compatibility allows operation at VGS=4.5V, while the robust UIS rating supports inductive switching loads. Evaluate the thermal dissipation requirements based on the specific PCB copper area and airflow conditions to ensure the junction temperature remains within the -55°C to 175°C range.

Single FETs, MOSFETs Part Context

The AOTF256L belongs to the family of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The device is housed in a TO-220F package, providing a balance between thermal performance and mounting flexibility for through-hole applications.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating for the AOTF256L?

The datasheet specifies an avalanche energy (EAS) rating of 4mJ when tested with an inductance of 0.1mH.

Is the AOTF256L tested for unclamped inductive switching?

Yes, the device undergoes 100% UIS testing to ensure reliability under inductive switching conditions.

What is the body diode reverse recovery time?

The body diode reverse recovery time (trr) is 37ns when tested at IF=10A and dI/dt=500A/ms.

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