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AOTF256L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 150V 3A/12A TO220-3F. Review the specifications below when checking this part for your BOM.
The AOTF256L is a 150V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum drain-source voltage of 150V and a continuous drain current of 12A at 25°C case temperature. The on-resistance is less than 85mΩ at VGS=10V and less than 100mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 2.8V max, total gate charge of 22nC at 10V, and input capacitance of 1165pF. Thermal characteristics specify a junction-to-case resistance of 4.6°C/W and a junction-to-ambient resistance of 60°C/W.
Verify the specific package variant and manufacturing revision against the latest Alpha & Omega Semiconductor datasheet before integration. Confirm that the thermal management design accommodates the specified junction-to-ambient and junction-to-case thermal resistances for the intended operating environment. Ensure compliance with export control regulations and legal requirements applicable to the destination region.
Select this component for designs requiring 150V blocking capability with efficient high-frequency performance. The logic-level gate drive compatibility allows operation at VGS=4.5V, while the robust UIS rating supports inductive switching loads. Evaluate the thermal dissipation requirements based on the specific PCB copper area and airflow conditions to ensure the junction temperature remains within the -55°C to 175°C range.
The AOTF256L belongs to the family of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The device is housed in a TO-220F package, providing a balance between thermal performance and mounting flexibility for through-hole applications.
No public confirmed substitute part numbers are available in the provided documentation.
The datasheet specifies an avalanche energy (EAS) rating of 4mJ when tested with an inductance of 0.1mH.
Yes, the device undergoes 100% UIS testing to ensure reliability under inductive switching conditions.
The body diode reverse recovery time (trr) is 37ns when tested at IF=10A and dI/dt=500A/ms.
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