AOTF25S65

Single FETs, MOSFETs Overview

The AOTF25S65 is an N-channel AlphaMOS power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 25 A at case temperature. The device is housed in a TO-220F through-hole package with a maximum power dissipation of 50 W at case temperature. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4 V at 1 mA, a maximum gate-source voltage (Vgs) of ±30 V, and a typical on-resistance (Rds(on)) of 1.8 Ω at 10 V gate drive. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 650 V drain-source breakdown voltage for robust operation in high-side switching applications.
• AlphaMOS technology provides optimized specific on-resistance for improved efficiency in power conversion circuits.
• Through-hole TO-220F packaging facilitates mechanical mounting and thermal management via heatsink attachment.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Motor control circuits
• Power factor correction (PFC) stages

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and moisture sensitivity level (MSL) requirements against your assembly process standards. Ensure thermal interface materials are compatible with the TO-220F lead frame for adequate heat dissipation during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V rating is required for hard-switching applications. Evaluate the 1.8 Ω Rds(on) against thermal constraints, as higher resistance may necessitate significant heatsinking compared to lower-voltage alternatives. Consider the through-hole form factor if PCB space allows and mechanical stability is prioritized over surface-mount density.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor, focusing on high-voltage discrete power transistors. The TO-220F package is a standard industry form factor designed for medium-power applications requiring reliable thermal performance and mechanical durability in industrial and consumer electronics environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 650 V N-channel MOSFETs in TO-220 packages. Verify pinout compatibility and ensure that replacement devices meet or exceed the 25 A current rating and 50 W power dissipation limits under similar thermal conditions.