Single FETs, MOSFETs AOTF27S60L product image

AOTF27S60L

$4.20
  • Description:MOSFET N-CH 600V 27A TO220-3F
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:ce95afa9a623 Category: Brand:

  
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AOTF27S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 27A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF27S60L

  • Description:MOSFET N-CH 600V 27A TO220-3F
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:160mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1294 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF27S60L

AOTF27S60L

Single FETs, MOSFETs Overview

The AOTF27S60L is a 600V N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing αMOS technology. It features a maximum drain-source voltage of 600V and continuous drain current of 27A at 25°C case temperature. The device has a typical gate charge of 26nC and a maximum on-resistance of 0.16Ω at VGS=10V. It supports a peak pulsed drain current of 110A and includes 100% UIS testing. The TO-220 package provides a junction-to-case thermal resistance of 3.1°C/W.

Single FETs, MOSFETs Feature Summary

  • Fabricated using advanced αMOS high voltage process for robust switching performance
  • Guaranteed avalanche capability with 100% Unclamped Inductive Switching (UIS) testing
  • Optimized low RDS(on), Qg, and EOSS for efficient offline power supply designs

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • High frequency switching applications
  • Power transistors requiring avalanche ruggedness

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the manufacturer's latest datasheet revision to confirm pinout and packaging details match your design requirements. Ensure component authenticity through authorized distribution channels. Check RoHS compliance status as per the most recent environmental declarations provided by Alpha & Omega Semiconductor.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600V blocking capability and 27A continuous current handling in a TO-220 package. Consider the 0.16Ω maximum RDS(on) for conduction loss calculations. Evaluate the 26nC typical gate charge for driver selection. Verify thermal management needs based on the 3.1°C/W junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the AOTF27S60 family, which includes variants like AOT27S60L and AOB27S60L. These devices share the same αMOS technology core but differ in packaging, such as TO-220 or TO-263. The AOTF27S60L specifically denotes the TO-220 form factor within this high-voltage transistor series.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AOT27S60L and AOB27S60L, which share identical electrical characteristics but may differ in physical package type (TO-220 vs TO-263). Verify pin compatibility before substitution.

Single FETs, MOSFETs FAQ

Is the AOTF27S60L tested for avalanche energy?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

What is the maximum junction temperature for this MOSFET?

The maximum junction temperature (TJ,max) is 150°C.

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