AOTF288L

Single FETs, MOSFETs Overview

The AOTF288L is an N-Channel MOSFET utilizing trench technology, rated for a drain-source voltage of 80V. It features a maximum continuous drain current of 43A at TC=100°C and a pulsed drain current of 36A. The on-state resistance is less than 9.2mΩ at VGS=10V and 20A, or less than 12.5mΩ at VGS=6V and 20A. Total gate charge is 38nC at 10V. The device operates within a junction temperature range of -55°C to 175°C and is housed in a TO-220F package.

Single FETs, MOSFETs Feature Summary

• Optimized trench MOSFET technology designed for efficient high-frequency switching performance.
• Minimized conduction and switching power losses through low RDS(ON), Ciss, and Coss combination.
• Validated reliability with 100% UIS (Unclamped Inductive Switching) testing.
• Includes 100% gate resistance (Rg) testing for quality assurance.

Single FETs, MOSFETs Applications

• Boost converters
• Synchronous rectifiers
• Consumer power supplies
• Telecom power supplies
• Industrial power supplies
• LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers AOT288L (TO-220), AOB288L (TO-263/D2PAK), and AOTF288L (TO-220F). Confirm thermal requirements against the distinct junction-to-case resistance values provided for each package type. Ensure compatibility with the specified operating temperature range and verify that the application does not exceed the absolute maximum ratings defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-frequency switching with minimized power loss. The TO-220F package offers specific thermal characteristics distinct from the TO-220 and TO-263 variants. Consider the low gate charge and fast switching times for drive circuit design. Evaluate the safe operating area curves to ensure the device can handle the intended load conditions without exceeding thermal limits.

Single FETs, MOSFETs Part Context

The AOTF288L belongs to a family of 80V N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. It shares core electrical specifications with the AOT288L and AOB288L models but differs in physical packaging. This series utilizes advanced trench technology to deliver high efficiency in power management solutions, targeting markets such as consumer electronics, telecommunications, and industrial equipment.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the AOT288L and AOB288L, which share identical electrical parameters but utilize different packages (TO-220 and TO-263, respectively). Verify pinout compatibility and thermal dissipation capabilities when substituting between these package types.

Single FETs, MOSFETs FAQ

What is the difference in thermal resistance between the AOTF288L and other variants?

The AOTF288L has a maximum junction-to-case thermal resistance (RqJC) of 4.2°C/W, whereas the AOT288L and AOB288L have a lower RqJC of 1.6°C/W.

Is the AOTF288L tested for avalanche energy?

Yes, the datasheet confirms that all devices in this series, including the AOTF288L, undergo 100% Unclamped Inductive Switching (UIS) testing.