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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOTS32338C is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It utilizes Trench Power MOSFET technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 3.8A at VGS=10V. Key electrical parameters include a maximum on-resistance (RDS(ON)) of less than 50mΩ at VGS=10V, 57mΩ at VGS=4.5V, and 72mΩ at VGS=2.5V. The total gate charge (Qg) is 16nC at VGS=10V, with an input capacitance (Ciss) of 340pF at VDS=15V. The component supports a junction temperature range from -55°C to 150°C.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure all procurement activities comply with applicable export control regulations and legal requirements.
Select this component for applications requiring low RDS(ON) in small form factors. Evaluate thermal performance based on the specific PCB copper area and ambient conditions, as junction-to-ambient resistance varies significantly with board design. Verify that the required gate drive voltage aligns with the specified RDS(ON) thresholds for optimal efficiency.
This part belongs to the Alpha & Omega Semiconductor trench MOSFET family, designed for general-purpose switching applications. It serves as a discrete solution for managing power flow in portable electronics and battery-powered devices where space constraints are critical.
No public confirmed substitute part numbers are available in the provided documentation.