Single FETs, MOSFETs AOW10T60P product image

AOW10T60P

  • Description:MOSFET N-CH 600V 10A TO262
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:8bddb10c710c Category: Brand:

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AOW10T60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 10A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOW10T60P

  • Description:MOSFET N-CH 600V 10A TO262
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:700mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1595 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):208W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOW10T60P

AOW10T60P

Single FETs, MOSFETs Overview

The AOW10T60P is a surface-mount N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power AlphaMOS-II technology. It features a Drain-Source Voltage (VDS) of 600V and a continuous Drain Current (ID) of 10A at TC=25°C. The maximum Drain-Source On-Resistance (RDS(ON)) is less than 0.7Ω at VGS=10V. Key dynamic parameters include a typical Total Gate Charge (Qg) of 26nC and an Effective Output Capacitance Energy (Eoss) of 3.5μJ at 400V. The device supports a Pulsed Drain Current (IDM) of 40A and operates within a Junction Temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Trench Power AlphaMOS-II technology for low on-resistance and high current capability.
  • Features low input capacitance (Ciss) and reverse transfer capacitance (Crss) for efficient switching.
  • Guaranteed avalanche capability with 100% UIS testing.

Single FETs, MOSFETs Applications

  • General lighting for LED and CCFL
  • AC/DC power supplies for industrial applications
  • AC/DC power supplies for consumer electronics
  • AC/DC power supplies for telecom equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific package type upon ordering, as the 'P' suffix denotes the TO-262 tube packaging. Confirm RoHS and Halogen-free compliance status directly with the manufacturer or authorized distributors. Ensure that the component is sourced from verified channels to guarantee authenticity and adherence to the consumer market qualification standards defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for offline power supply designs requiring robust performance and guaranteed avalanche ruggedness. The low gate charge and capacitance values make it suitable for applications prioritizing switching efficiency. Consider the thermal characteristics and safe operating area curves when designing heatsinking solutions for continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the AOW10 series of 600V N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. It shares core electrical specifications with variants such as the AOWF10T60P, which utilizes a different package format. The series is designed for AC-DC applications, offering a balance of low RDS(on) and high dv/dt ruggedness.

Single FETs, MOSFETs Replacement Considerations

The AOWF10T60P is a direct functional equivalent with identical electrical ratings but differs in physical packaging (TO-262F vs. TO-262). Cross-manufacturer replacements must match the 600V rating, 10A current capacity, and RDS(ON) limits while verifying pinout compatibility.

Single FETs, MOSFETs FAQ

Is the AOW10T60P qualified for unclamped inductive switching?

Yes, the datasheet confirms that the device has been 100% tested for Unclamped Inductive Switching (UIS) capability.

What is the maximum repetitive avalanche energy rating?

The Maximum Repetitive Avalanche Energy (EAR) is rated at 6mJ under specified test conditions.

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