AOW11S60

Single FETs, MOSFETs Overview

The AOW11S60 is a single N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 11 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 0.399 Ω. Packaged in the TO-262 form factor, it supports through-hole mounting. Key electrical characteristics include a gate charge of 17 nC at 10 V and an avalanche energy rating of 120 mJ. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600 V drain-source breakdown voltage for robust power switching applications.
• Integrated avalanche energy rating of 120 mJ to withstand inductive load switching stresses.
• Through-hole TO-262 package design facilitating efficient thermal dissipation via direct heatsink mounting.

Single FETs, MOSFETs Applications

• Industrial motor control systems requiring high-voltage isolation
• Power supply circuits utilizing inductive loads
• Solid-state relay implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Alpha & Omega Semiconductor or authorized distributors. Confirm that the TO-262 package dimensions match your PCB footprint requirements. Ensure compliance with RoHS directives if required by your manufacturing standards. Cross-reference part numbers carefully as variations may exist between legacy and current production batches.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating is mandatory and through-hole assembly is preferred over surface mount alternatives. The 11 A current capacity suits moderate-power switching tasks. Evaluate thermal management needs based on the 0.399 Ω on-resistance and the specific ambient conditions of the target enclosure. Compare against TO-220 variants if space constraints differ significantly from the TO-262 profile.

Single FETs, MOSFETs Part Context

This device belongs to the AOS MOSFET portfolio, designed for general-purpose power switching. It utilizes silicon metal-oxide semiconductor technology optimized for efficiency and reliability. The TO-262 package provides a balance between thermal performance and mechanical stability for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the AOD11S60 for surface-mount DPAK applications and the AOT3N60 for lower-current TO-220 requirements. Verify pinout compatibility and thermal resistance values before substitution.