Single FETs, MOSFETs AOW125A60 product image

AOW125A60

$4.50
  • Description:MOSFET N-CH 600V 28A TO262
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:1c78dc44cfe7 Category: Brand:

  
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AOW125A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 28A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOW125A60

  • Description:MOSFET N-CH 600V 28A TO262
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:125mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2993 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):312.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOW125A60

AOW125A60

Single FETs, MOSFETs Overview

The AOW125A60 is a 600V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 700V and a continuous drain current of 28A at 25°C, with a pulsed current rating of 100A. The device exhibits a maximum on-resistance of 0.125Ω at 100°C case temperature. Key electrical parameters include a typical gate charge of 39nC, an effective output capacitance energy (Eoss) of 6.3mJ at 400V, and a body diode reverse recovery time of 375ns. Thermal characteristics specify a junction-to-case resistance of 0.4°C/W for the TO-262 package.

Single FETs, MOSFETs Feature Summary

  • Proprietary aMOS5 technology designed for low on-resistance and optimized switching performance to improve EMI characteristics.
  • Enhanced body diode structure providing robustness and fast reverse recovery capabilities.
  • Validated ruggedness through 100% testing for unclamped inductive switching (UIS) and gate resistance.

Single FETs, MOSFETs Applications

  • Switching Mode Power Supplies (SMPS) incorporating Power Factor Correction (PFC), Flyback, and LLC topologies.
  • Micro inverters utilizing DC/AC inverter topologies.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard AOW125A60 corresponds to the TO-262 package, while the AOWF125A60 variant utilizes the TO-262F package. Confirm that the received part matches the required thermal resistance specifications, as the junction-to-case values differ significantly between the two package types.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with efficient switching characteristics. The 700V breakdown voltage provides margin above the nominal 600V rating. Consider the thermal management requirements carefully, noting the distinct junction-to-case thermal resistances associated with the different available package options.

Single FETs, MOSFETs Part Context

This N-Channel MOSFET belongs to Alpha & Omega Semiconductor's aMOS5 product family. It is engineered for power conversion applications where efficiency and reliability are critical. The device integrates advanced silicon technology to minimize conduction losses while maintaining strong avalanche capability for inductive load protection.

Single FETs, MOSFETs Replacement Considerations

The AOWF125A60 serves as a direct functional substitute within the same series, distinguished primarily by its TO-262F package configuration rather than electrical performance differences.

AOW125A60AOW125A60
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