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AOWF11N70 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 700V 11A TO262F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOWF11N70
- Description：MOSFET N-CH 700V 11A TO262F
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：870mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262F
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for AOWF11N70
Single FETs, MOSFETs Overview
The AOWF11N70 is an N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It features a 700V drain-source voltage rating and supports a continuous drain current of 11A at 25°C. The device utilizes advanced trench technology to achieve low on-resistance, specified as 680mΩ maximum at VGS=10V and ID=5.5A. It is housed in a TO-262 (TO-262AB) package, suitable for surface-mount applications with a thermal resistance of 1.9°C/W from junction to case.
Single FETs, MOSFETs Feature Summary
- High voltage capability with 700V breakdown rating
- Advanced trench gate technology for optimized performance
- Low on-resistance characteristics for efficient power switching
- Robust avalanche energy handling capability
Single FETs, MOSFETs Applications
- Motor control systems
- Power factor correction circuits
- DC-DC converters
- Industrial power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing. Confirm that the component matches the required TO-262 package dimensions and pinout configuration. Ensure compliance with RoHS directives if applicable to your manufacturing process. Cross-reference part numbers with official manufacturer lists to avoid counterfeit components.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage switching applications requiring moderate current handling. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Compare on-resistance values against system efficiency targets. Ensure gate drive voltages align with the specified thresholds for optimal conduction.
Single FETs, MOSFETs Part Context
This part belongs to the AOS N-channel MOSFET family designed for general-purpose power switching. It complements other high-voltage devices in the portfolio, offering a balance between voltage rating and current capacity. The TO-262 package provides a cost-effective solution for surface-mount designs needing reliable performance in industrial environments.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the AOTF11N70 (through-hole variant) and AOZ8S502BDS-05 for different form factors. Verify pin compatibility and thermal characteristics before substitution. Consult official replacement guides for electrically equivalent parts within the same voltage and current class.
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