AOWF160A60

$1.17

Description：MOSFET N-CH 600V 24A TO262F
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:3433f1877449 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOWF160A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 24A TO262F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOWF160A60

Description：MOSFET N-CH 600V 24A TO262F
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：160mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2340 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：27.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262F
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOWF160A60

AOWF160A60

Single FETs, MOSFETs Overview

The AOWF160A60 is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary αMOS5™ technology. It features a 600V drain-source voltage rating and a maximum continuous drain current of 24A at case temperature. The device offers a typical on-resistance of 0.14Ω and a peak pulsed drain current of 96A. Key electrical parameters include a gate threshold voltage ranging from 2.4V to 3.6V, total gate charge of 46nC, and body diode reverse recovery time of 387ns. Thermal characteristics specify a junction-to-case resistance of 4.5°C/W and an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Proprietary αMOS5™ technology for low on-resistance and optimized switching performance.
Enhanced body diode designed for robustness and fast reverse recovery.
Optimized switching parameters intended to improve electromagnetic interference (EMI) performance.

Single FETs, MOSFETs Applications

Switch-mode power supplies with Power Factor Correction (PFC).
Flyback converter topologies.
LLC resonant converter designs.
Micro inverters utilizing DC/AC inverter topology.

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the AOWF160A60 corresponds to the TO-262F surface-mount package. Confirm that design requirements align with the absolute maximum ratings, particularly the 600V breakdown voltage and thermal dissipation limits. Ensure compliance with export control regulations and evaluate product suitability for the intended application before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling with moderate current capacity in a surface-mount form factor. The enhanced body diode characteristics make it suitable for hard-switching topologies where reverse recovery behavior is critical. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within safe operating limits during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the AOW series of N-channel power transistors from Alpha & Omega Semiconductor. It shares the same core die and electrical specifications as the through-hole AOW160A60 but utilizes a different package configuration. The series leverages αMOS5™ technology to achieve competitive on-resistance and switching speeds for general-purpose power conversion applications.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists the AOW160A60 as the equivalent through-hole version with identical electrical characteristics. No other substitute part numbers are documented in the provided source material.