AOWF600A70

Single FETs, MOSFETs Overview

The AOWF600A70 is an N-channel power MOSFET from Alpha & Omega Semiconductor, designed for through-hole mounting in the TO-220 package. It features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 8.5 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 600 mΩ at Vgs = 10 V and Id = 2.5 A. Key electrical parameters include a gate charge (Qg) of 15.5 nC at 10 V, input capacitance (Ciss) of 870 pF at 100 V, and a threshold voltage (Vgs(th)) of 3.5 V max at 250 µA. Power dissipation is rated at 25 W (Tc), with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 700 V drain-source breakdown voltage for robust operation in demanding environments.
• Through-hole construction utilizing the TO-220 package to facilitate mechanical mounting and thermal management.
• Optimized switching characteristics featuring low gate charge and controlled input capacitance for efficient drive requirements.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Industrial motor control systems
• Power supply units requiring through-hole isolation

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'W' against official Alpha & Omega Semiconductor documentation to confirm pinout orientation or lead configuration differences compared to standard variants. Ensure the procurement specification explicitly requires the through-hole TO-220 form factor, as surface-mount equivalents like the AOD series differ physically. Cross-reference the manufacturer part number with the latest datasheet revision to confirm compliance with current RoHS3 standards and any recent packaging changes.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with through-hole termination is required for thermal or mechanical integration. The 700 V rating suits applications exceeding standard 600 V limits. Compare the 600 mΩ Rds(on) against circuit loss calculations at the target load current. Verify that the driver can supply sufficient voltage to achieve the specified 15.5 nC gate charge performance efficiently within the -55°C to 150°C operating range.

Single FETs, MOSFETs Part Context

This device belongs to the AOS aMOS5™ technology family, which integrates advanced process design for high-performance power switching. Manufactured by Alpha & Omega Semiconductor, it complements their portfolio of discrete power devices including SiC and GaN solutions. The TO-220 variant provides a rugged alternative to surface-mount packages for industrial and consumer electronics assemblies requiring durable physical connections.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Alpha & Omega Semiconductor documentation for direct replacements or verify compatibility with similar 700 V N-channel TO-220 MOSFETs based on pinout and electrical parameter matching.