APT1001RBVFRG

$13.04

Description：MOSFET N-CH 1000V 11A TO247
Series：POWER MOS V®
Mfr：Microchip Technology
Package：Tube

SKU:dca795636b52 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1001RBVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 11A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1001RBVFRG

Description：MOSFET N-CH 1000V 11A TO247
Series：POWER MOS V®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：3050 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1001RBVFRG

APT1001RBVFRG

Single FETs, MOSFETs Overview

The APT1001RBVFRG is a Power MOS V® N-Channel enhancement mode power MOSFET in a TO-247 package. It features a 1000V drain-source breakdown voltage and an on-state resistance of 1.00Ω at 5.5A. The device supports an 11A continuous drain current and handles up to 44A pulsed current. Key dynamic characteristics include a total gate charge of 150nC, reverse recovery time of 200ns, and avalanche energy ratings of 30mJ repetitive and 1210mJ single pulse.

Single FETs, MOSFETs Feature Summary

Power MOS V® technology minimizes the JFET effect and reduces on-resistance for improved efficiency.
Optimized gate layout enables faster switching speeds compared to previous generations.
Rated for avalanche energy operation with fast recovery body diode characteristics.

Single FETs, MOSFETs Applications

High voltage DC-DC converters
Resonant converter circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix BVFR confirms the TO-247 through-hole package variant. Confirm RoHS compliance status as indicated in official documentation. Ensure handling procedures account for electrostatic discharge sensitivity during installation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage designs requiring robust avalanche capability. Evaluate thermal management requirements based on the 1.00Ω on-resistance at operating currents. Consider the 150nC gate charge when designing drive circuitry for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip Power MOS V® family of high-voltage N-channel MOSFETs. It utilizes advanced silicon technology to achieve lower leakage and higher packing density than prior iterations.