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APT1003RSFLLG/TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1KV 4A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT1003RSFLLG/TR
- Description：MOSFET N-CH 1KV 4A D3PAK
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：694 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT1003RSFLLG/TR
Single FETs, MOSFETs Overview
The APT1003RSFLLG/TR is a surface-mount N-channel Power MOS 7 transistor manufactured by Microchip Technology. It features a D3PAK package with a drain-source voltage rating of 1000 V and a continuous drain current of 4 A at case temperature. The device exhibits a maximum on-resistance of 3 ohms at 2 A and 10 V gate drive, with a gate charge of 34 nC. It supports a maximum power dissipation of 139 W and operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with a 1000 V drain-source breakdown voltage for robust power switching applications.
- Optimized Power MOS 7 technology providing controlled on-resistance characteristics under standard gate drive conditions.
- Surface-mount D3PAK packaging designed for efficient thermal management and high power dissipation.
Single FETs, MOSFETs Applications
- High-voltage DC-DC converter circuits
- Industrial motor control systems
- Power supply switching stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and tape-and-reel configuration against official Microchip documentation prior to procurement. Confirm that the D3PAK footprint matches the target PCB design requirements. Ensure compliance with relevant RoHS directives as specified in the manufacturer's product compliance statements.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rating is required for high-side or low-side switching applications. Evaluate the 3-ohm on-resistance against thermal constraints to ensure the 139 W dissipation limit is not exceeded. Verify that the 10 V gate drive requirement aligns with the available control logic levels in the system design.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip Power MOS 7 series, which focuses on high-voltage discrete semiconductors. The D3PAK form factor distinguishes it from through-hole alternatives, offering a compact solution for modern surface-mount assembly processes while maintaining high thermal performance capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip documentation for verified cross-reference part numbers. Do not substitute based solely on generic electrical parameters without confirming pinout compatibility and package dimensions.
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