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APT10078BLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 14A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10078BLLG
- Description：MOSFET N-CH 1000V 14A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：780mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2525 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：403W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT10078BLLG
Single FETs, MOSFETs Overview
The APT10078BLLG is an N-channel Power MOSFET manufactured by Microchip Technology. It features a 1000 V drain-source breakdown voltage and a continuous drain current of 14 A at case temperature. The device is housed in a TO-247-3 package with a power dissipation rating of 403 W. Key electrical characteristics include a gate charge of 95 nC and a typical on-resistance consistent with its class. It operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability for robust power switching applications
- Low input capacitance for improved switching performance
- Through-hole mounting for secure mechanical attachment
Single FETs, MOSFETs Applications
- Industrial motor control systems
- Power supply inverters
- DC-DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet version from Microchip Technology or authorized distributors before procurement. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 403 W power dissipation rating under your specific operating conditions. Check for any recent product discontinuance notifications.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation and moderate current handling are required in through-hole designs. Compare gate charge and on-resistance against alternative MOSFETs to optimize switching losses. Consider the thermal resistance characteristics of the TO-247-3 package for heat sink selection. Evaluate the 1000 V rating against peak transient voltages in the target circuit.
Single FETs, MOSFETs Part Context
This part belongs to the MOSFET category within Microchip Technology's discrete semiconductor portfolio. It utilizes silicon technology and is designed for general-purpose power switching. The TO-247-3 package provides a balance of electrical performance and mechanical durability suitable for industrial environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip documentation for verified cross-reference part numbers. Ensure any substitute maintains equivalent voltage, current, and package specifications.
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