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The APT100GN120J is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology within the ISOTOP package. It features a collector-emitter maximum voltage of 1.2 kV and a continuous collector current of 153 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 600 nA. Maximum power dissipation reaches 446 W, with an operating temperature range from -55°C to +150°C. The unit weighs 29.2 g and supports surface mount installation.
Verify component authenticity through authorized Microchip distributors or certified suppliers. Request original datasheets and test reports to confirm technical specifications match the required operational parameters. Ensure proper handling procedures are followed during storage and assembly to prevent electrostatic discharge damage.
Select this module when a single high-voltage switch is required in a surface-mount form factor. Consider the 1.2 kV rating and 153 A current capacity against system load requirements. Evaluate the ISOTOP package compatibility with existing PCB layouts and thermal design constraints before finalizing the design.
This component belongs to the APT series of discrete IGBT modules produced by Microchip Technology. It represents a specific variant within the broader portfolio of power semiconductor devices designed for medium-power applications. The model designation indicates its electrical ratings and packaging style relative to other products in the same family.
Publicly confirmed substitute part numbers for this specific component were not identified in available documentation. Verify pinout and electrical characteristics carefully if considering alternative manufacturers or different package types.